Ⅰ.
Silicon carbide ceramic sheet product introduction:
High-frequency insulating silicon carbide wafer (SiC) is a third-generation semiconductor material, a compound semiconductor composed of carbon elements and silicon elements. It has excellent properties such as high breakdown voltage, high thermal conductivity and wide band gap (3.26 eV). It is an ideal material for manufacturing high-temperature, high-frequency, and high-power electronic devices.
Ⅱ.
Core features
1. Physical properties:
Density: 3.21-3.23 g/cm³ (only 40% of steel).
Hardness: Mohs hardness 9.0-9.5 (second only to diamond).
Thermal conductivity: 120-150 W/(m·K) (3-4 times that of silicon).
Melting point: about 2730℃.
2. Electrical properties:
Breakdown voltage: 8-10 times that of silicon.
Electron saturation drift rate: 2-3 times that of silicon.
Dielectric constant: 9-10, suitable for high frequency applications.
Insulating properties: high breakdown voltage and low leakage current.
Ⅲ.
Application fields.
1. New energy vehicles: electric drive system, fast charging pile.
2. 5G communications: base station radio frequency devices.
3. Photovoltaic and wind power: inverter.
4. Smart grid: high-voltage power equipment.
5. Aerospace: high temperature components.
Ⅰ.Technical parameters
Parameter category | 4H-SiC | 6H-SiC |
Bandgap width | 3.26 eV | 3.03 eV |
electron mobility | High (2-3 times higher than 6H-SiC) | lower |
Applicable scenarios | High frequency, high voltage | High current applications |
Supports custom specifications.
If you have any suggestions or questions, Please free to contact us.
